Silicon Carbide (SiC) Wafers and Substrates 1. 4H-SiC N-Type Wafer Substrate Diameter: 4″ up to 6″ Grade: Production, Research, Dummy Thickness: 350µm or 500µm Micropipe Density: 0.5/cm² up to 10/cm² Resistivity: 0.015 – 0.025 ohm.cm 2. 4H-SiC Semi
Silicon Carbide (SiC) Wafers and Substrates 1. 4H-SiC N-Type Wafer Substrate Diameter: 4″ up to 6″ Grade: Production, Research, Dummy Thickness: 350µm or 500µm Micropipe Density: 0.5/cm² up to 10/cm² Resistivity: 0.015 – 0.025 ohm.cm 2. 4H-SiC Semi